MF832M1-GMCAVXX データシートの表示（PDF） - MITSUBISHI ELECTRIC
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MF832M1-GMCAVXX Datasheet PDF : 22 Pages
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MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
RECOMMENDED OPERATING CONDITIONS (Ta=0 to 55°C, unless otherwise noted)
Symbol
Parameter
Min.
Limits
Typ.
Max.
VCC
VCC Supply voltage
4.75
5.0
5.25
VIH
High input voltage
2.4
VCC
VIL
Low input voltage
0
0.8
NACT
Number of simultaneous activated
Programme
1
memory zones/blocks
Erase
1
Unit
V
V
V
Zone
Block
CAPACITANCE
Symbol
Parameter
Test conditions
Limits
Min. Typ. Max.
Ci
Input capacitance VI=GND, vi=25mVrms, f=1 MHZ, Ta=25°C
45 pF
Co
Output capacitance VI=GND, vo=25mVrms, f=1 MHZ, Ta=25°C
45 pF
Note 9 : These parameters are not 100% tested.
ELECTRICAL CHARACTERISTICS
Ta= 0 to 55°C, VCC=5V+/-5%, unless otherwise noted)
Symbol
VOH
VOL
IIH
IIL
Parameter
High output current
Low output voltage
High input current
Low output voltage
Conditions
IOH=-0.1mA, BVDn
IOH=-1.0mA, Other outputs
IOL=2mA
VI=VCC V
VI=0V CE1#, CE2#, OE#, WE#, REG#
Other inputs
Min.
2.4
2.4
0
-10
Limits
Typ. Max.
0.4
10
-70
-10
Unit
V
V
µA
µA
IOZH
IOZL
High output current
in off state
Low output current
in off state
CE1#=CE2#=VIH or OE#=VIH,VO(Dm)=VCC
CE1#=CE2#=VIH or OE#=VIH, VO(Dm)=0V
10 µA
-10 µA
ICC 1 • 1
Active VCC supply
current 1
CE1#=CE2#=VIL, Other inputs=VIH or VIL,
Outputs=open
130 200 mA
Active VCC supply
ICC 1 • 2 current 2
CE1#=CE2# < 0.2V, Other inputs < 0.2V
or > VCC-0.2V, Outputs=open
110 180 mA
2MB
6.0
4MB
6.0
ICC 2 • 1 Standby VCC
supply current 1
CE1#=CE2#=VIH, Other
inputs=VIH or VIL
8MB
16MB
20MB
32MB
2MB
10
18 mA
22
34
0.05 1.2
4MB
0.05 1.4
ICC 2 • 2 Standby VCC supply CE1#=CE2# > VCC-0.2V,
current 2
Other inputs < 0.2V
8MB
16MB
0.10 1.8
0.20 1.8 µA
or > VCC-0.2V
20MB
32MB
0.25 2.0
0.40 2.6
Note 10 : Currents flowing into the card are taken as positive (unsigned).
Typical values are measured at VCC=5.0V,Ta=25°C.
The card consumes active current at programming, erasure even if both CE1# and CE2# are
high level.
MITSUBISHI
ELECTRIC
15/22
Feb.1999 Rev2.0
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