MF832M1-GMCAVXX データシートの表示（PDF） - MITSUBISHI ELECTRIC
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MF832M1-GMCAVXX Datasheet PDF : 22 Pages
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MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
SWITCHING CHARACTERISTICS (COMMON MEMORY) (Ta= 0 to 55°C, Vcc=5V+/-5% )
Symbol
Parameter
Limits
M i n . Typ. M a x . Unit
tcR
Read cycle time
150
ns
ta(A)
Address access time
150 ns
ta(CE)
Card enable access time
150 ns
ta(OE)
Output enable access time
75 ns
tdis(CE)
Output disable time (from CE#)
75 ns
tdis(OE)
Output disable time (from OE#)
75 ns
ten(CE)
Output enable time (from CE#)
5
ns
ten(OE)
Output enable time (from OE#)
5
ns
tv(A)
Data valid time after address change
0
ns
TIMING REQUIREMENTS (COMMON MEMORY) (Ta= 0 to 55°C, Vcc=5V+/-5% )
Symbol
Parameter
Limits
Min. Typ.
tcW
Write cycle time
150
tSU(A)
Address setup time
20
trec(WE)
Write recovery time
20
tsu(D-WEH) Data setup time
50
th(D)
Data hold time
20
tWRR
Write recovery time before read
0
tsu(A-WEH) Address setup time to write enable high
100
tsu(CE)
Card enable setup time
20
th(CE)
Card enable hold time
20
tw(WE)
Write pulse width
80
tWPH
Write pulse width high
40
tDP
Duration of programming operation
6.5
tDE
Duration of erase operation
900
Note 11 : Refer to switching characteristics for read parameters
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
TIMING DIAGRAM
Common Memory Read
VIH
An
VIL
VIH
CE#
VIL
tcR
ta(A)
ta(CE)
tV(A)
VIH
OE#
VIL
Dm VOH
(DOUT) VOL
ta(OE)
ten(CE)
ten(OE)
High-Z
OUTPUT VALID
tdis(CE)
tdis(OE)
WE# =“H” level, REG# =”H” level
MITSUBISHI
ELECTRIC
16/22
Feb.1999 Rev2.0
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