MF832M1-GMCAVXX データシートの表示（PDF） - MITSUBISHI ELECTRIC

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MF832M1-GMCAVXX

8/16-bit Data Bus Flash Memory Card

MITSUBISHI ELECTRIC  

MITSUBISHI MEMORY CARD

FLASH MEMORY CARDS

Note 12 : AC Test Conditions

Input pulse levels : VIL=0.4V, VIH=2.8V

Input pulse rise, fall time : tr=tf=10ns

Reference voltage

Input : VIL=0.8V, VIH=2.4V

Output : VOL=0.8V, VOH=2.0V

(ten and tdis are measured when output voltage is ± 500mV from steady state. )

Load : 100pF+ 1 TTL gate

5pF+ 1 TTL gate (at ten and tdis measuring)

13 : The data write is performed during the interval when both CE# and WE# are “L” level.

14 : Do not apply inverted phase signal externally when Dm pin is in output mode.

15 : CE# is indicated as follows:

Read A/Write A : CE#=CE1#=CE2#

Read B/Write B : CE#=CE1#, CE2#=“H” level

Read C/Write C : CE#=CE2#, CE1#=“H” level

16:

Indicates the don’t care input.

RECOMMENDED POWER UP/DOWN CONDITIONS (Ta=0 to 55°C, unless otherwise noted)

Symbol

Parameter

Test conditions

Limits

Min.

Max.

Unit

0V< VCC <2V

0

VI

V

Vi(CE)

CE input voltage

2 V < V C C < VIH

VCC-0.1

VI

V

VIH < V C C

VIH

VI

V

tsu(CE)

CE# setup time

5.0

ms

trec(CE)

CE# recovery time

1.0

µs

tpr(VCC)

VCC rise time

0.1

300

ms

tpf(VCC)

VCC fall time

3.0

300

ms

POWER UP TIMING DIAGRAM

tpr(Vcc)

0.9×VCC

0V

Insertion

VCC

0.1×VCC

VIH

2V

4.75V

tsu(CE)

tpr(Vcc)

0.9×VCC

CE1#,CE2#

4.75V

tsu(CE)

VCC

CE1#,CE2#

VIH

2V

0.1×VCC

0V

Withdraw

BLOCK PROGRAM/ERASE TIME

Limits

Parameters

Typ.

Max.

Unit

Block erase time

1.1

10

s

Block program time

0.5

2.1

s

Note 17 : At Ta=25°C, Vcc=5V

Byte/word program time is about 8µ s (typical), but not guaranteed.

MITSUBISHI

ELECTRIC

20/22

Feb.1999 Rev2.0

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