MF832M1-GMCAVXX データシートの表示（PDF） - MITSUBISHI ELECTRIC
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MF832M1-GMCAVXX Datasheet PDF : 22 Pages
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SWITCHING CHARACTERISTICS (ATTRIBUTE MEMORY)
Read Cycle (Ta= 0 to 55°C, VCC=5V+/-5%, unless otherwise noted)
Symbol
Parameter
tcRR
ta(A)R
ta(CE)R
ta(OE)R
tdis(dis)R
tdis(OE)R
ten(CE)R
ten(CE)R
tv(A)R
Read cycle time
Address access time
Card enable access time
Output enable access time
Output disable time (from CE#)
Output disable time (from OE#)
Output enable time (from CE#)
Output enable time (from OE#)
Data valid time after address change
MITSUBISHI MEMORY CARD
FLASH MEMORY CARDS
Min.
300
5
5
0
Limits
Typ.
Max.
300
300
150
100
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING REQUIREMENTS (ATTRIBUTE MEMORY)
Write Cycle GM series only (Ta= 0 to 55°C, VCC=5V+/-5%, unless otherwise noted)
Symbol
Parameter
Limits
Min. Typ.
tASR
Address setup time
30
tAHR
Address hold time
30
tCSR
CE setup time
40
tCHR
CE hold time
30
tDSR
Data setup time
120
tDHR
Data hold time
40
tOESR
OE setup time
30
tOEHR
OE hold time
40
tWPR
Write pulse width
170
tDLR
Data latch time
120
tBLR
Byte load cycle time
100
tWCR
Write cycle time
10
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
TIMING DIAGRAM (Attribute Memory)
Read
VIH
An
VIL
tCRR
ta(A)R
VIH
CE#
VIL
ta(CE)R
ten(CE)R
VIH
OE#
VIL
Dm VOH
(DOUT) VOL
High-Z
ten(OE)R
WE# =“H” level, REG# =”L” level
tv(A)R
ta(OE)R
tdis(OE)R
OUTPUT VALID
tdis(CE)R
MITSUBISHI
ELECTRIC
18/22
Feb.1999 Rev2.0
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