PHD95N03LT データシートの表示（PDF） - Philips Electronics

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PHD95N03LT

N-channel enhancement mode field-effect transistor

Philips Electronics 

Philips Semiconductors

PHD95N03LT

N-channel enhancement mode field-effect transistor

8. Characteristics

Table 5: Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Static characteristics

V(BR)DSS drain-source breakdown voltage

VGS(th) gate-source threshold voltage

IDSS

drain-source leakage current

IGSS

RDSon

gate-source leakage current

drain-source on-state resistance

Dynamic characteristics

ID = 0.25 mA; VGS = 0 V

Tj = 25 °C

Tj = −55 °C

ID = 1 mA; VDS = VGS; Figure 9

Tj = 25 °C

Tj = 175 °C

Tj = −55 °C

VDS = 25 V; VGS = 0 V

Tj = 25 °C

Tj = 175 °C

VGS = ±5 V; VDS = 0 V

VGS = 5 V; ID = 25 A; Figure 7 and 8

Tj = 25 °C

Tj = 175 °C

VGS = 10 V; ID = 25 A; Figure 7 and 8

Tj = 25 °C

gfs

forward transconductance

Qg(tot) total gate charge

Qgs

gate-source charge

Qgd

gate-drain (Miller) charge

Ciss

input capacitance

Coss

output capacitance

Crss

reverse transfer capacitance

td(on)

turn-on delay time

tr

turn-on rise time

td(off)

turn-off delay time

tf

turn-off fall time

Source-drain diode

VDS = 25 V; ID = 50 A

ID = 50 A; VDD = 12 V; VGS = 4.5 V;

Figure 13

VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11

VDD = 15 V; ID = 15 A; VGS = 10 V;

RG = 6 Ω; resistive load

VSD

source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12

IS = 40 A; VGS = 0 V; Figure 12

Min Typ Max Unit

25 − − V

22 − − V

1 1.5 2 V

0.5 − − V

− − 2.3 V

− 0.05 10 µA

− − 500 µA

− 10 100 nA

− 7.5 9 mΩ

− 13 15.5 mΩ

− 5 7 mΩ

− 50 − S

− 43 − nC

− 12 − nC

− 16 − nC

− 2200 − pF

− 770 − pF

− 500 − pF

− 10 20 ns

− 30 50 ns

− 110 140 ns

− 80 100 ns

− 0.85 1.2 V

− 0.9 − V

9397 750 08216

Product data

Rev. 01 — 18 July 2001

© Philips Electronics N.V. 2001. All rights reserved.

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