DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M29W400 データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
M29W400 Datasheet PDF : 34 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
M29W400T, M29W400B
Table 16A. Write AC Characteristics, Chip Enable Controlled
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W400T / M29W400B
Symbol Alt
Parameter
-90
VCC = 3.0V to 3.6V
CL = 30pF
Min
Max
-100
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
tAVAV
tWC Address Valid to Next Address Valid
90
100
tWLEL
tWS Write Enable Low to Chip Enable Low
0
0
tELEH
tCP Chip Enable Low to Chip Enable High
45
50
tDVEH
tDS Input Valid to Chip Enable High
45
50
tEHDX
tDH Chip Enable High to Input Transition
0
0
tEHWH
tWH Chip Enable High to Write Enable High
0
0
tEHEL
tCPH Chip Enable High to Chip Enable Low
30
30
tAVEL
tAS Address Valid to Chip Enable Low
0
0
tELAX
tAH Chip Enable Low to Address Transition
45
50
tGHEL
Output Enable High Chip Enable Low
0
0
tVCHWL
tVCS VCC High to Write Enable Low
50
50
tEHGL
tOEH Chip Enable High to Output Enable Low
0
0
tPHPHH (1,2) tVIDR RP Rise TIme to VID
500
500
tPLPX
tRP RP Pulse Width
tEHRL (1)
tBUSY Program Erase Valid to RB Delay
tPHWL (1)
tRSP RP High to Write Enable Low
Notes: 1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
500
500
90
90
4
4
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
µs
Erase Suspend (ES) Instruction. The Block
Erase operation may be suspendedby this instruc-
tion which consists of writing the command B0h
without any specific address. No Coded cycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
toggling when the P/E.C. is suspended.The Toggle
bits will stop toggling between0.1µs and 15µs after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
a block not being erased returns valid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It will result in both DQ2 and DQ6 toggling
when the data is being programmed. ARead/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
20/34

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]