M29W008AB データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
M29W008AB Datasheet PDF : 30 Pages
| |||
M29W008AT, M29W008AB
Table 16. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W008AT / M29W008AB
Symbol Alt
Parameter
100
Test
Condition VCC = 2.7V to 3.6V
CL = 30pF
120
VCC = 2.7V to 3.6V
CL = 30pF
Unit
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next Address
Valid
E = VIL,
G = VIL
100
120
ns
tAVQV tACC Address Valid to Output Valid
E = VIL,
G = VIL
100
120 ns
tAXQX
tOH
Address Transition to Output
Transition
E = VIL,
G = VIL
0
0
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
0
0
ns
tEHQZ (1) tHZ Chip Enable High to Output Hi-Z
G = VIL
30
30
ns
tELQV (2) tCE Chip Enable Low to Output Valid
G = VIL
100
120 ns
tELQX (1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
0
0
ns
tGHQX
tOH
Output Enable High to Output
Transition
E = VIL
0
0
ns
tGHQZ (1) tDF Output Enable High to Output Hi-Z E = VIL
30
30
ns
tGLQV (2) tOE Output Enable Low to Output Valid E = VIL
40
50
ns
tGLQX (1)
tOLZ
Output Enable Low to Output
Transition
E = VIL
0
0
ns
tPHEL
tRH RP High to Chip Enable Low
50
50
ns
tPLYH(1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
µs
tPLPX
tRP RP Pulse Width
500
500
ns
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
14/30
Share Link: 