2N120BND データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
2N120BND
Fairchild Semiconductor
2N120BND Datasheet PDF : 8 Pages
| |||
HGTP2N120BND, HGT1S2N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
0.8
CIES
0.6
FREQUENCY = 1MHz
0.4
0.2
COES
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
3.0 DUTY CYCLE < 0.5%, TC = 110oC
PULSE DURATION = 250µs
2.5
2.0
VGE = 15V
1.5
VGE = 10V
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
SINGLE PULSE
10-4
10-3
10-2
t1, RECTANGULAR PULSE DURATION (s)
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-1
100
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
10
150oC
1
25oC
0.1
-55oC
0.5
1.0
1.5
2.0
2.5
VF, FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
70
TC = 25oC, dIEC / dt = 200A/µs
60
trr
50
40
ta
30
tb
20
10
0
1
2
3
4
5
IF, FORWARD CURRENT (A)
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
©2001 Fairchild Semiconductor Corporation
HGTP2N120BND, HGT1S2N120BNDS Rev. B
Share Link: