M58CR032C100ZB6T データシートの表示（PDF） - STMicroelectronics

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M58CR032C100ZB6T

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

STMicroelectronics 

M58CR032C, M58CR032D

while VPP > VPP1 enables these functions (see Ta-

ble 19, DC Characteristics for the relevant values).

VPP is only sampled at the beginning of a program

or erase; a change in its value after the operation

has started does not have any effect on Program

or Erase, however for Double or Quadruple Word

Program the results are uncertain.

If VPP is in the range 11.4V to 12.6V it acts as a

power supply pin. In this condition VPP must be

stable until the Program/Erase algorithm is com-

pleted (see Table 16 and 17). In read mode the

current sunk is less then 0.5mA, while during pro-

gram and erase operations the current may in-

crease up to 10mA.

VSS and VSSQ Grounds. VSS and VSSQ grounds

are the reference for the core supply and the input/

output voltage measurements respectively.

Note: Each device in a system should have

VDD, VDDQ and VPP decoupled with a 0.1µF ca-

pacitor close to the pin. See Figure 10, AC Mea-

surement Load Circuit. The PCB trace widths

should be sufficient to carry the required VPP

program and erase currents.

11/62

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