MCF51JF128(2011) データシートの表示（PDF） - Freescale Semiconductor
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MCF51JF128 Datasheet PDF : 71 Pages
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Memories and memory interfaces
Table 17. Flash command timing specifications (continued)
Symbol Description
Program Section execution time
tpgmsec512
tpgmsec1k
• 512 B flash
• 1 KB flash
Min.
—
—
Typ.
TBD
TBD
Max.
TBD
TBD
Unit
Notes
ms
ms
trd1all Read 1s All Blocks execution time
—
—
1.8
ms
trdonce Read Once execution time
—
—
35
μs
1
tpgmonce Program Once execution time
—
50
TBD
μs
tersall Erase All Blocks execution time
—
100
500
ms
2
tvfykey Verify Backdoor Access Key execution time
—
—
35
μs
1
Program Partition for EEPROM execution time
tpgmpart32k
• 32 KB FlexNVM
—
25
TBD
ms
tsetram8k
tsetram32k
Set FlexRAM Function execution time:
• 8 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
—
100
TBD
μs
3
time
Byte-write to FlexRAM execution time:
teewr8b8k
teewr8b16k
teewr8b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
1.5
ms
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
—
100
TBD
μs
Word-write to FlexRAM execution time:
teewr16b8k
teewr16b16k
teewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
1.5
ms
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
—
200
TBD
μs
Longword-write to FlexRAM execution time:
teewr32b8k
teewr32b16k
teewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
2.7
ms
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
MCF51JF128 Advance Information Data Sheet, Rev. 2, 05/2011.
Freescale Semiconductor, Inc.
Preliminary
27
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