NAND04GW3C2N1E データシートの表示（PDF） - STMicroelectronics
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NAND04GW3C2N1E Datasheet PDF : 51 Pages
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3 Signal Descriptions
NAND04GA3C2A, NAND04GW3C2A
3.7
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.8
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
Controller is currently active.
When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the
operation completes Ready/Busy goes High, VOH.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to the Section 12.1: Ready/busy signal electrical characteristics for details on how to
calculate the value of the pull-up resistor.
3.9
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for operations (read, program and erase).
3.10
VSS ground
Ground, VSS, is the reference for the power supply. It must be connected to the system
ground.
3.11
VSSQ
VSSQ is the ground reference for the I/O power supply. It must be connected to the system
ground.
3.12
VDDQ
VDDQ provides power to the I/O buffers.
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