M36W0R5020B0 データシートの表示（PDF） - STMicroelectronics

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M36W0R5020B0

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

STMicroelectronics 

M36W0R5020T0, M36W0R5020B0

MAXIMUM RATING

Stressing the device above the rating listed in the

Absolute Maximum Ratings table may cause per-

manent damage to the device. These are stress

ratings only and operation of the device at these or

any other conditions above those indicated in the

Operating sections of this specification is not im-

plied. Exposure to Absolute Maximum Rating con-

ditions for extended periods may affect device

reliability. Refer also to the STMicroelectronics

SURE Program and other relevant quality docu-

ments.

Table 3. Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Min

Max

TA

Ambient Operating Temperature

–40

85

°C

TBIAS

Temperature Under Bias

–40

125

°C

TSTG

Storage Temperature

–65

155

°C

TLEAD

Lead Temperature During Soldering

(1)

°C

VIO

Input or Output Voltage

–0.5

VDDQ+0.6

V

VDDF

Flash Memory Core Supply Voltage

–0.2

2.45

V

VDDQ

Input/Output Supply Voltage

–0.2

2.45

V

VDDS

SRAM Supply Voltage

–0.2

2.4

V

VPPF

Flash Memory Program Voltage

–0.2

14

V

IO

Output Short Circuit Current

100

mA

tVPPFH

Time for VPPF at VPPFH

100

hours

Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK ® 7191395 specification,

and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

12/26

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