M36W0R5020B0 データシートの表示（PDF） - STMicroelectronics

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M36W0R5020B0

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

STMicroelectronics 

M36W0R5020T0, M36W0R5020B0

DC AND AC PARAMETERS

This section summarizes the operating measure-

ment conditions, and the DC and AC characteris-

tics of the device. The parameters in the DC and

AC characteristics Tables that follow, are derived

from tests performed under the Measurement

Conditions summarized in Table 4., Operating and

AC Measurement Conditions. Designers should

check that the operating conditions in their circuit

match the operating conditions when relying on

the quoted parameters.

Table 4. Operating and AC Measurement Conditions

Parameter

Flash Memory

Min

Max

SRAM

Unit

Min

Max

VDDF Supply Voltage

1.7

1.95

–

–

V

VDDS Supply Voltage

–

–

1.7

1.95

V

VDDQ Supply Voltage

1.7

1.95

–

–

V

VPPF Supply Voltage (Factory environment)

11.4

12.6

–

–

V

VPPF Supply Voltage (Application environment)

–0.4

VDDQ +0.4

–

–

V

Ambient Operating Temperature

–40

85

–40

85

°C

Load Capacitance (CL)

30

30

pF

Output Circuit Resistors (R1, R2)

16.7

16.7

kΩ

Input Rise and Fall Times

5

1

ns

Input Pulse Voltages

0 to VDDQ

0 to VDDS

V

Input and Output Timing Ref. Voltages

VDDQ/2

VDDS/2

V

Figure 6. AC Measurement I/O Waveform

VDDQ

0V

VDDQ/2

AI06161

Figure 7. AC Measurement Load Circuit

VDDQ

VDDF

VDDQ

0.1µF

0.1µF

DEVICE

UNDER

TEST

R1

CL

R2

Table 5. Device Capacitance

Symbol

Parameter

CIN

Input Capacitance

COUT

Output Capacitance

Note: Sampled only, not 100% tested.

Test Condition

VIN = 0V

VOUT = 0V

CL includes JIG capacitance

AI08364B

Min

Max

Unit

12

pF

15

pF

13/26

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