M36W0R5020B0 データシートの表示（PDF） - STMicroelectronics
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M36W0R5020B0
32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package
STMicroelectronics
M36W0R5020B0 Datasheet PDF : 26 Pages
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M36W0R5020T0, M36W0R5020B0
Table 9. SRAM Read AC Characteristics
Symbol Alt
Parameter
M36W0R5020T0,
M36W0R5020B0
Unit
Min
Max
tAVAV
tE1LE1H
tE2HE2L
tRC Read Cycle Time
70
ns
tAVQV tAA Address Valid to Output Valid
70
ns
tAVQX tOHA Address Transition to Output Transition
10
ns
tBHQZ(2) tHZBE Byte Enable High to Data Hi-Z
25
ns
tBLQV tDBE Byte Enable Low to Data Valid
70
ns
tBLQX(2) tLZBE Byte Enable Low to Data Transition
5
ns
tE1HQZ
tE2LQZ
tHZCE Chip Enable 1 High or Chip Enable 2 Low to Data Hi-Z
25
ns
tE1LQV
tE2HQV
tACE Chip Enable 1 Low or Chip Enable 2 High to Data Valid
70
ns
tE1LQX
tE2HQX
tLZCE Chip Enable 1 Low or Chip Enable 2 High to Data Transition
10
ns
tGHQZ tHZOE Output Enable High to Data Hi-Z
25
ns
tGLQV tDOE Output Enable Low to Data Valid
35
ns
tGLQX tLZOE Output Enable Low to Data Transition
5
ns
tPD(1)
Chip Enable 1 High or Chip Enable 2 Low to Power Down
70
ns
tPU(1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
Note: 1. Sampled only. Not 100% tested.
2. Whatever the temperature and voltage, tE1HDZ and tE2LDZ are less than tE1LDX and tE2HDX; tBHDZ is less than tBLDX and, tGHDZ is
less than tGHDX.
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