M36W0R5020B0 データシートの表示（PDF） - STMicroelectronics

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M36W0R5020B0

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

STMicroelectronics 

M36W0R5020T0, M36W0R5020B0

Table 7. Flash Memory DC Characteristics - Voltages

Symbol

Parameter

Test Condition

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

IOL = 100µA

VOH Output High Voltage

IOH = –100µA

VPP1 VPPF Program Voltage-Logic

Program, Erase

VPPH VPPF Program Voltage Factory

Program, Erase

VPPLK Program or Erase Lockout

VLKO VDDF Lock Voltage

VRPH RPF pin Extended High Voltage

Min

Typ

Max

Unit

–0.5

0.4

V

VDDQ –0.4

VDDQ + 0.4 V

0.1

V

VDDQ –0.1

V

1.1

1.8

3.3

V

11.4

12

12.6

V

0.4

V

1

V

3.3

V

Table 8. SRAM DC Characteristics

Symbol

Parameter

Test Condition

ILI Input Leakage Current

0V ≤ VIN ≤ VDD

ILO Output Leakage Current

0V ≤ VOUT ≤ VDDS, Output disabled

IDDS

VDD Standby Current

E1S ≥ VDDS – 0.2V or E2S ≤ 0.2V

VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V

f = fmax (Address and Data inputs only)

f = 0 (GS, WS, UBS and LBS)

E1S ≥ VDDS – 0.2V or E2S ≤ 0.2V

VIN ≥ VDDS – 0.2V or VIN ≤ 0.2V

f = 0, VDD(max)

IDD Supply Current

f = fmax = 1/tAVAV, CMOS levels VDDS =

VDDS(max)

IOUT = 0 mA, f = 1MHz, CMOS levels

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

IOL = 0.1mA, VDSD = 1.65V

VOH Output High Voltage

IOH = −0.1mA, VDDS = 1.65V

Min

Max Unit

±1

µA

±1

µA

10

µA

10

µA

6

mA

–0.2

1.4

1.4

3

mA

0.4

V

VDDS+0.2 V

0.2

V

V

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